Structural, Morphological-topological, Dielectric Properties of Binary Metal Oxide Ni2O3-Co3O4 Electronic Material
Jagadish Chandra Padhi, Satyanarayan Bhuyan, Seshadev Sahoo
Quarterly No. 4, 2025 pages 226-233
DOI: https://doi.org/10.62753/ctp.2025.01.4.4
keywords: ceramic mixed oxides, NiCo2O4 material, topology, dielectric response
abstract The distinctive solid state mixed oxide-based step-sintering technique was used to fabricate nickel cobaltite (NiCo2O4) material from Ni2O3 and Co3O4. The material's attributes, namely crystallite size of 40.06 nm with minimal strain of 0.0024, dislocation density 8.4 × 1014 m-2 and cubic crystal structure were revealed by means of X-ray diffraction and the W-H method. SEM micrographs of the microstructure reveal polycrystalline grains of different sizes with clear grain boundaries and an evenly aligned grain texture. This material has been proven to be a suitable capacitive component for advanced electronic applications with the aid of experimentally investigated structural features, grain distribution topography, polar histogram and temperature dependent frequency dispersion dielectric spectra. This material is a desirable candidate for device designs since it exhibits relatively high dielectric permittivity and low dielectric loss at high frequencies, indicating minimum energy dissipation. The results and analysis affirm the dielectric properties, lending credence to the idea that nickel cobaltite could be a viable oxide-based ceramic entity for appropriate device applications.